Isolation body for semiconductor devices and method to form the same
作者： Hemant Deshpande , Sunit Tyagi , Giuseppe Curello , Mark Bohr
DOI:
关键词:
摘要: A semiconductor device and method for its fabrication are described. An isolation body may be formed prior to formation of an active region. In one embodiment, the is void-free.
lens.org 参考文章(20)
Sunit Tyagi, Using epitaxially grown wells for reducing junction capacitances ,(1998)
Karsten Wieczorek, Christian Krueger, Manfred Horstmann, Soi field effect transistor element having a recombination region and method of forming same ,(2003)
Rashid Bashir, Method of producing high quality silicon surface for selective epitaxial growth of silicon ,(1995)
Shahriar Ahmed, Stephen Chambers, Richard Green, Anand Murthy, Mark Bohr, Self aligned compact bipolar junction transistor layout and method of making same ,(2002)
Chuan-Yi Lin, Wen-Chin Lee, Shien-Yang Wu, Sun-Jay Chang, Microelectronic device with depth adjustable sill ,(2004)
Hsun-Chih Tsao, Jhi-Cherng Lu, Di-Hong Lee, Kuang-Hsin Chen, Chuan-Ping Hou, Hung-Wei Chen, STI liner for SOI structure ,(2003)
Sunit Tyagi, Process for making semiconductor device with epitaxially grown source and drain ,(2000)
Hidenori Saihara, Hiroyuki Sugaya, Hiroshi Naruse, Method of forming selective epitaxial film ,(1997)
Brian Doyle, Silicon-on-insulator devices and method for producing the same ,(1999)