Using epitaxially grown wells for reducing junction capacitances
作者： Sunit Tyagi
DOI:
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摘要: The present invention is a semiconductor device having and method for forming wells by growing an epitaxial silicon layer wherein the has at least three sublayers. first sublayer highly doped, second less third also doped. use of epitaxially grown allows placement high dopant concentrations in regions well where electrical isolation issue lower doped not as great order to help reduce problem parasitic capacitance.
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