作者: S. Micheletti , A. Quarteroni , R. Sacco
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摘要: Abstract We study the current-voltage characteristics of one-dimensional semiconductor devices by numerical approximation based on finite elements steady-state device equations. A block nonlinear Gauss-Seidel procedure is employed to decouple full system. Then, at each iteration, a Neumann-Neumann domain decomposition method applied solve linearized Numerical examples will be given, with special emphasis charge generation effects due impact ionization.