Stabilized finite elements for semiconductor device simulation
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摘要: This work deals with the numerical simulation of so-called Drift-Diffusion model for semiconductors. It includes two current continuity equations which are scalar convection-diffusion equations, possibly dominating convection. To face this problem we have resorted to main strategies. We use Streamline–Upwind/Petrov-Galerkin (SUPG) method a shock-capturing technique increases amount dissipation in neighbourhood layers without loosing high accuracy regions where solution is smooth. strategy carried out along adaptive grid refinement reduces mesh size only needed. Numerical results cases physical interest dimensions on unstructured grids presented. Total Variation Diminishing (TVD) methods and Mixed Finite Volumes (MFV) tested as well.
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