An FEM based framework to simulate semiconductor devices using streamline upwind Petrov-Galerkin stabilization technique
作者： Gaurav Kumar , Mandeep Singh , Ashok Ray , Gaurav Trivedi
DOI: 10.1109/RADIOELEK.2017.7936644
关键词:
摘要: In this paper, a Continuous Galerkin Finite Element Method has been used to build suitable framework numerically analyse semiconductor devices for various applications in electronics industry. Streamline upwind Petrov-Galerkin (SUPG) stabilization technique utilized calculate the flux (flow of charge) device effectively. SUPG proved be better than classical Scharfetter-Gummel method solve advection-diffusion equation. We have implemented semi-classical Drift-Diffusion model simulate devices, incorporating different models carrier generation-recombination and mobility. enables use coarse unstructured mesh get accurate results which effectively reduces simulation time as well. Simulation PN junction diode MOSFET presented validate effectiveness method.
sci-hub.se 参考文章(10)
Javier de Frutos, Bosco García-Archilla, Volker John, Julia Novo, An adaptive SUPG method for evolutionary convection–diffusion equations Computer Methods in Applied Mechanics and Engineering. ,vol. 273, pp. 219- 237 ,(2014) , 10.1016/J.CMA.2014.01.022
A. De Mari, An accurate numerical steady-state one-dimensional solution of the P-N junction Solid-State Electronics. ,vol. 11, pp. 33- 58 ,(1968) , 10.1016/0038-1101(68)90137-8
Aurelio Mauri, Andrea Bortolossi, Giovanni Novielli, Riccardo Sacco, 3D finite element modeling and simulation of industrial semiconductor devices including impact ionization Journal of Mathematics in Industry. ,vol. 5, pp. 1- 18 ,(2015) , 10.1186/S13362-015-0015-Z
Stefano Micheletti, Stabilized finite elements for semiconductor device simulation Computing and Visualization in Science. ,vol. 3, pp. 177- 183 ,(2001) , 10.1007/S007910000046
M. Pourfath, V. Sverdlov, S. Selberherr, Transport modeling for nanoscale semiconductor devices ieee international conference on solid-state and integrated circuit technology. pp. 1737- 1740 ,(2010) , 10.1109/ICSICT.2010.5667336
J. Tinsley Oden, An Introduction to the Finite Element Method with Applications to Nonlinear Problems (R. E. White) SIAM Review. ,vol. 31, pp. 512- 512 ,(1989) , 10.1137/1031114
Christophe Geuzaine, Jean-François Remacle, Gmsh: A 3-D finite element mesh generator with built-in pre- and post-processing facilities International Journal for Numerical Methods in Engineering. ,vol. 79, pp. 1309- 1331 ,(2009) , 10.1002/NME.2579
J.J. Barnes, R.J. Lomax, Finite-element methods in semiconductor device simulation IEEE Transactions on Electron Devices. ,vol. 24, pp. 1082- 1089 ,(1977) , 10.1109/T-ED.1977.18880
Swetlana Giere, Traian Iliescu, Volker John, David Wells, SUPG reduced order models for convection-dominated convection–diffusion–reaction equations Computer Methods in Applied Mechanics and Engineering. ,vol. 289, pp. 454- 474 ,(2015) , 10.1016/J.CMA.2015.01.020
Norainon Mohamed, Muhamad Zahim Sujod, Finite Elements in Semiconductor Devices ieee international conference on information management and engineering. pp. 108- 110 ,(2009) , 10.1109/ICIME.2009.18