摘要: The system of partial differential equations which forms the basic semiconductor together with appropriate boundary conditions cannot be solved explicitly in general. Therefore, solution must calculated by means numerical approaches. Finite Element Analysis (FEA) is a computer simulation technique used engineering analysis called finite element method (FEM). aim this paper to show progress obtained understanding relationship between elements equations. An implementation FEM also includes Gummel’s and Newton-Raphson algorithms for both Poisson current continuity Results are shown Gate Turn-Off (GTO) thyristor based on silicon carbide (SiC) materials.
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