Lift-Off Assisted Patterning of Few Layers Graphene.

摘要: Graphene and 2D materials have been exploited in a growing number of applications the quality deposited layer has found to be critical issue for functionality developed devices. Particularly, Chemical Vapor Deposition (CVD) high graphene should preserved without defects also subsequent processes transferring patterning. In this work, lift-off assisted patterning process Few Layer (FLG) obtain significant simplification whole method conformal growth on micrometre size features. The is based catalyst seed prior FLG deposition. Starting from SiO2 finished Silicon substrate, photolithographic step carried out define micro patterns, then an evaporation Pt thin film Al2O3 adhesion performed. Subsequently, Pt/Al2O3 attained using dimethyl sulfoxide (DMSO) bath. was grown directly patterned by (CVD). Raman spectroscopy applied area order investigate obtained graphene. Following novel technique minimization de-wetting phenomenon temperatures up 1000 °C achieved micropatterns, down 10 µm, were easily covered with FLG.