作者: Y. Pauleau , G. Auvert
DOI: 10.1007/978-3-642-71446-7_9
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摘要: In the field of microelectronic devices, laser-induced processes are currently under investigation for various applications such as wafer marking, substrate cleaning, doping, oxidation, etching, deposition thin films, exposure or removal photoresists and recrystallization silicon on insulators [1]. Laser irradiation reactant gases can generate activated species surface localized growth microstructures be achieved by focusing a laser beam absorbing substrates. Owing to small diameters high energy densities (fluences), very reaction rates obtained. The spot positioned automatically moved over making one step fabrication possible. This “direct writing” technique is promising establish new interconnection networks in very-large scale integrated (VLSI) circuits through chemical vapor (LCVD) etching. With processes, semiconductor devices have been fabricated without using masks [2]. processing way obtaining precision required industry with micron submicron sizes. Review papers published laser-generated [3] well CVD [4–7] laser-microchemical VLSI [8–12].