Experiments on In2S3:Sn Thin Films with up to 1% Tin Content
作者： J. Koaib , C. Vázquez-Vázquez , M. A. López-Quintela , S. Alaya , M. Kraini
DOI: 10.1007/S11664-016-4823-8
关键词:
摘要: Tin-doped indium sulfide (In2S3:Sn) thin films with different Sn:In molar ratios (0% to 1% by mol in solution) have been deposited on glass substrates a chemical spray pyrolysis method. The were investigated x-ray diffraction analysis, optical absorption, Raman, and photoluminescence spectroscopies, field-emission scanning electron microscopy, energy-dispersive spectroscopy, atomic force microscopy. structural properties revealed that the In2S3:Sn had polycrystalline cubic structure average crystallite size increasing from 16.3 nm 25.5 nm. surface morphology of was continuous crack free. root-mean-square roughness increased 13.12 31.65 16.14 39.39 nm, respectively, ratio. Raman studies presence vibration modes related In2S3 phase, no signature secondary phases. transmission coefficient about 65% 70% visible region 90% near-infrared region. bandgap values for allowed direct transitions found lie range 2.68 eV 2.80 eV. refractive index decreased 2.45 2.37 while k lay 0.02 0.25 all wavelengths. Defect-related are also discussed. These promising candidates use optoelectronic photovoltaic devices.
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