Influence of the InAs coverage on the phonon-assisted recombination in InAs/GaAs quantum dots
作者： C. Rudamas , J. Martı́nez-Pastor , A. Garcı́a-Cristóbal , Ph. Roussignol , J.M. Garcı́a
DOI: 10.1016/S0039-6028(02)01326-2
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摘要: Abstract In this work, a study of the relaxation mechanisms in InAs self-assembled quantum dots have been performed by means photoluminescence (PL), resonant PL (RPL) and excitation. The observed phenomenology is different for samples with coverage. At low coverages, two Raman scattering lines are when excitation energy chosen inside emission band. These related to TO LO GaAs phonons. Multi-phonon carriers (GaAs phonons) clearly RPL lowest coverage sample. Neither such mechanism nor present larger which average dot size areal density remain essentially constant.
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