Monolayer coverage effects on size and ordering of self-organized InAs islands grown on (1 1 3)B InP substrates
作者： S Fréchengues , N Bertru , V Drouot , C Paranthoen , O Dehaese
DOI: 10.1016/S0022-0248(99)00593-X
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摘要: InAs islands have been grown by gas source molecular beam epitaxy on (113)B InP substrates and examined by atomic force microscopy and photoluminescence. Two types of island …
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