Optical spectroscopy and modelling of double-cap grown InAs/InP quantum dots with long wavelength emission
作者： H Folliot , N Bertru , S Loualiche , M Senes , X Marie
DOI: 10.1088/0268-1242/17/10/103
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摘要: We report on an optical study of InAs quantum dots grown InP(311)B substrate, and lasing at 1.55 µm wavelength. A new growth technique, called the 'double-cap' has been used to reach 300 K. The samples are characterized low temperature room by continuous-wave time-resolved photoluminescence techniques. wetting layer emission a dot excited state clearly observed for first time in this kind dot, results consistent with theoretical calculations. At same time, these structures seem have better capture efficiency.
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