Optical properties and carrier dynamics of InAs/InP(1 1 3)B quantum dots emitting between 1.3 and 1.55 μm for laser applications
作者： P. Miska , J. Even , C. Paranthoen , O. Dehaese , H. Folliot
DOI: 10.1016/S1386-9477(02)00749-X
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摘要: We present new optical properties of InAs/InP quantum dots (QDs) emitting around 1.55μm for laser applications. An original growth method enables us to control the QD emission wavelength between 1.3 and at room temperature. Results on QDs 1.3μm are presented in this work. They have been studied by measurements with continuous wave time-resolved photoluminescence experiments. Moreover, results obtained modelling band structure seems be consistent interpretations experimental data.
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