Room temperature laser emission of 1.5 μm from InAs/InP(311)B quantum dots
作者： C Paranthoen , N Bertru , B Lambert , O Dehaese , A Le Corre
DOI: 10.1088/0268-1242/17/2/102
关键词:
摘要: We report on the 1.5 μm laser emission from InAs quantum dots (QDs) grown a InP(311)B substrate. The control of optical wavelength is obtained by two-step modified growth procedure, called 'double cap' procedure. This enables us to obtain 1.55 InAs/InP(311)B QDs, with narrow height dispersion. Laser six-stacked QD layer sample has been demonstrated excitation at room temperature. Lasing an excited state, for low density 10 kW cm−2. shows that could emit telecommunication wavelength.
harvard.edu
archives-ouvertes.fr
sci-hub.se 参考文章(9)
C. Paranthoen, N. Bertru, O. Dehaese, A. Le Corre, S. Loualiche, B. Lambert, G. Patriarche, Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm Applied Physics Letters. ,vol. 78, pp. 1751- 1753 ,(2001) , 10.1063/1.1356449
Hideaki Saito, Kenichi Nishi, Sigeo Sugou, Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates Applied Physics Letters. ,vol. 78, pp. 267- 269 ,(2001) , 10.1063/1.1339846
S. Fréchengues, N. Bertru, V. Drouot, B. Lambert, S. Robinet, S. Loualiche, D. Lacombe, A. Ponchet, Wavelength tuning of InAs quantum dots grown on (311)B InP Applied Physics Letters. ,vol. 74, pp. 3356- 3358 ,(1999) , 10.1063/1.123343
D. L. Huffaker, G. Park, Z. Zou, O. B. Shchekin, D. G. Deppe, 1.3 μm room-temperature GaAs-based quantum-dot laser Applied Physics Letters. ,vol. 73, pp. 2564- 2566 ,(1998) , 10.1063/1.122534
N N Ledentsov, M V Maximov, D Bimberg, T Maka, C M Sotomayor Torres, I V Kochnev, I L Krestnikov, V M Lantratov, N A Cherkashin, Yu M Musikhin, Zh I Alferov, 1.3 µm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition Semiconductor Science and Technology. ,vol. 15, pp. 604- 607 ,(2000) , 10.1088/0268-1242/15/6/320
J. Brault, M. Gendry, G. Grenet, G. Hollinger, Y. Desières, T. Benyattou, Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001) Applied Physics Letters. ,vol. 73, pp. 2932- 2934 ,(1998) , 10.1063/1.122634
Marius Grundmann, The present status of quantum dot lasers Physica E-low-dimensional Systems & Nanostructures. ,vol. 5, pp. 167- 184 ,(1999) , 10.1016/S1386-9477(99)00041-7
H. Saito, K. Nishi, A. Kamei, S. Sugou, Low chirp observed in directly modulated quantum dot lasers IEEE Photonics Technology Letters. ,vol. 12, pp. 1298- 1300 ,(2000) , 10.1109/68.883809
V.M. Ustinov, A.E. Zhukov, A.Yu. Egorov, A.R. Kovsh, S.V. Zaitsev, N.Yu. Gordeev, V.I. Kopchatov, N.N. Ledentsov, A.F. Tsatsul'nikov, B.V. Volovik, P.S. Kop'ev, Z.I. Alferov, S.S. Ruvimov, Z. Liliental-Weber, D. Bimberg, Low threshold quantum dot injection laser emitting at 1.9 [micro sign]m Electronics Letters. ,vol. 34, pp. 670- 672 ,(1998) , 10.1049/EL:19980373