Approach to wetting-layer-assisted lateral coupling of InAs/InP quantum dots
作者： C. Cornet , C. Platz , P. Caroff , J. Even , C. Labbé
DOI: 10.1103/PHYSREVB.72.035342
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摘要: We present new results on the simulation of two-dimensional (2D) quantum dot(s) (QDs) $\mathrm{In}\mathrm{As}∕\mathrm{In}\mathrm{P}$ superlattices, emitting at $1.55\phantom{\rule{0.3em}{0ex}}\ensuremath{\mu}\mathrm{m}$, optical telecommunication wavelength. QDs and wetting layer (WL) electronic energy states are close in such a system. Using Fourier-transformed Schr\"odinger equation developed mixed basis, we describe layer-assisted inter-QDs lateral (WLaiQD) coupling by studying influence WL vice versa. The show that have to be considered as unique system, strong conditions. increase density leads enhanced splitting miniband effects states. It induces fragmentation interpreted 0D-like confinement A comparison is made with real high sample. expected an impact carrier-capture phenomena optoelectronic devices using high-density active region.
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