Techniques for temperature-controlled ion implantation

摘要: Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus implantation. The comprise a platen to hold wafer in single-wafer process chamber during implantation, including: clamping mechanism secure onto and provide predetermined thermal contact between platen, or more heating elements pre-heat maintain temperature range above room temperature. also post-cooling station cool down after further handling assembly load pre-heated remove from station.