作者: Nobue Tanaka
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摘要: A temperature measuring sensor is incorporated in a substrate of semiconductor device to measure the substrate. The has diode formed substrate, and resistor connected series. When first forward constant current supplied through resistor, potential difference V A1 produced between terminal ends both series, F1 diode. second A2 F2 real T calculated by following formula: =( q/k )( −V )[1/[ ln (( )/( ))]] herein: an absolute temperature, k Boltzmann's constant, q electron charge.