作者: H. Ennen , J. Schneider , G. Pomrenke , A. Axmann
DOI: 10.1063/1.94190
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摘要: Well‐resolved sharply structured luminescence spectra at 1.54 μm were observed in erbium‐implanted GaP, GaAs, InP, and Si. The optical transitions occur between the weakly crystal …