Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer
作者： J He , Y.C Zhang , B Xu , Z.G Wang
DOI: 10.1016/S0022-0248(02)01940-1
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摘要: The structure and optical properties of In(Ga)As grown with the introduction InGaAlAs or InAlAs seed dots layers are investigated. area density size homogeneity upper InGaAs efficiently improved a layer high-density buried dots. When GaAs spacer is too thin to cover dots, exhibit characterization quantum well. By analyzing growth dynamics, we refer it as an empty-core dot. (C) 2002 Elsevier Science B.V. All rights reserved.
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