Evidence of interdot electronic tunneling in vertically coupled In0.4Ga0.6As self-organized quantum dots

作者: J. Urayama , T. B. Norris , B. Kochman , J. Singh , P. Bhattacharya

DOI: 10.1063/1.126356

关键词: ScatteringExcitationQuantum tunnellingScanning tunneling spectroscopyCondensed matter physicsSpectroscopyExcited stateElectronQuantum dotChemistry

摘要: Ultrafast differential transmission spectroscopy with a resonant pump reveals evidence of electronic tunneling among the excited levels vertically aligned In0.4Ga0.6As self-organized quantum dots. This is observed as rapid spectral redistribution electrons within few hundred femtoseconds optical excitation. Measurements show that this spread independent carrier density and, therefore, indicate carrier–carrier scattering not main mechanism for redistribution. Instead, responsible interdot coupling; rate calculations agree reasonably experiment, supporting conclusion.

参考文章(13)
Igor Vurgaftman, Jasprit Singh, Effect of spectral broadening and electron‐hole scattering on carrier relaxation in GaAs quantum dots Applied Physics Letters. ,vol. 64, pp. 232- 234 ,(1994) , 10.1063/1.111513
T. S. Sosnowski, T. B. Norris, H. Jiang, J. Singh, K. Kamath, P. Bhattacharya, Rapid carrier relaxation inIn0.4Ga0.6As/GaAsquantum dots characterized by differential transmission spectroscopy Physical Review B. ,vol. 57, pp. R9423- R9426 ,(1998) , 10.1103/PHYSREVB.57.R9423
Hongtao Jiang, Jasprit Singh, Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study Physical Review B. ,vol. 56, pp. 4696- 4701 ,(1997) , 10.1103/PHYSREVB.56.4696
D. G. Deppe, Q. Deng, Tunneling transport and diffusion in weakly coupled quantum dot ensembles Applied Physics Letters. ,vol. 73, pp. 3536- 3538 ,(1998) , 10.1063/1.122799
B. Lita, R. S. Goldman, J. D. Phillips, P. K. Bhattacharya, Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots Applied Physics Letters. ,vol. 74, pp. 2824- 2826 ,(1999) , 10.1063/1.124026
L. R. C. Fonseca, J. L. Jimenez, J. P. Leburton, Electronic coupling in InAs/GaAs self-assembled stacked double-quantum-dot systems Physical Review B. ,vol. 58, pp. 9955- 9960 ,(1998) , 10.1103/PHYSREVB.58.9955
D. Morris, N. Perret, S. Fafard, Carrier energy relaxation by means of Auger processes in InAs/GaAs self-assembled quantum dots Applied Physics Letters. ,vol. 75, pp. 3593- 3595 ,(1999) , 10.1063/1.125398
Richard M. Martin, Elastic Properties of ZnS Structure Semiconductors Physical Review B. ,vol. 1, pp. 4005- 4011 ,(1970) , 10.1103/PHYSREVB.1.4005
B. Ohnesorge, M. Albrecht, J. Oshinowo, A. Forchel, Y. Arakawa, RAPID CARRIER RELAXATION IN SELF-ASSEMBLED INXGA1-XAS/GAAS QUANTUM DOTS Physical Review B. ,vol. 54, pp. 11532- 11538 ,(1996) , 10.1103/PHYSREVB.54.11532