A nano-scale quantum dot photodetector by self-assembly

摘要: Modern CMOS transistors will not scale well in the next decade due to leakage currents, sources of variation, and platform requirements. To keep cost per transistor decreasing, realize feasibility ultra-high density integrated circuits, low power techniques efficiency optimization are being explored counter these problems. Parallel development electronic VLSI, using photons as a means carrying information has been an appealing approach, high speed broad bandwidth light, elimination on-chip parasitic electro-magnetic interference its counterpart. This paper focuses on photonic circuits solve high-density problem, presents design for nano-scale QD optical transducer (QDOT) that function near-field photodetector can easily interface into self- assembled circuit (QDIC). The consists between two metal electrodes. tunneling current electrodes is mediated by be gated changing signal intensity impinging QD. device fabricated via self-assembly QDs. In this method, chemistry linker such DNA or APTES covalently bound pre- defined zones substrate. global location electron-beam lithography (EBL). Numerical simulations discussed ideal characteristics presented.