Time-resolved photoluminescence spectroscopy of InAs quantum dots on InP with various InAlGaAs barrier thicknesses
作者： JJ Yoon , SI Jung , HJ Park , HK Suh , MH Jeon
DOI: 10.1016/J.PHYSE.2004.08.054
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摘要: Abstract The Optical characteristics of InAs quantum dots (QDs) embeded in InAlGaAs on InP have been investigated by photoluminescence (PL) spectroscopy and time-resolved PL. Four different QD samples are grown using molecular beam epitaxy, all the five-stacked dot layers with a barrier thickness. PL yield from QDs was increased an increase thickness barrier, emission peak positions were measured around 1.5 μm at room temperature. decay time carrier is decreased abruptly sample 5 nm barrier. This feature explained tunneling coupling effect vertical direction probably defect generation.
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J. Urayama, T. B. Norris, B. Kochman, J. Singh, P. Bhattacharya, Evidence of interdot electronic tunneling in vertically coupled In0.4Ga0.6As self-organized quantum dots Applied Physics Letters. ,vol. 76, pp. 2394- 2396 ,(2000) , 10.1063/1.126356
U. Bockelmann, T. Egeler, Electron relaxation in quantum dots by means of Auger processes. Physical Review B. ,vol. 46, pp. 15574- 15577 ,(1992) , 10.1103/PHYSREVB.46.15574
R. Leon, S. Chaparro, S. R. Johnson, C. Navarro, X. Jin, Y. H. Zhang, J. Siegert, S. Marcinkevičius, X. Z. Liao, J. Zou, Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties Journal of Applied Physics. ,vol. 91, pp. 5826- 5830 ,(2002) , 10.1063/1.1467963
S. Hinooda, S. Fréchengues, B. Lambert, S. Loualiche, M. Paillard, X. Marie, T. Amand, Carrier dynamics of self-assembled InAs quantum dots on InP (311)B substrates Applied Physics Letters. ,vol. 75, pp. 3530- 3532 ,(1999) , 10.1063/1.125378
S Sanguinetti, M Padovani, M Gurioli, E Grilli, M Guzzi, A Vinattieri, M Colocci, P Frigeri, S Franchi, L Lazzarini, G Salviati, Study of GaAs spacer layers in InAs/GaAs vertically aligned quantum dot structures Thin Solid Films. ,vol. 380, pp. 224- 226 ,(2000) , 10.1016/S0040-6090(00)01511-X
S. Fafard, Z. Wasilewski, J. McCaffrey, S. Raymond, S. Charbonneau, InAs self‐assembled quantum dots on InP by molecular beam epitaxy Applied Physics Letters. ,vol. 68, pp. 991- 993 ,(1996) , 10.1063/1.116122
Weon G. Jeong, P. Daniel Dapkus, U. H. Lee, J. S. Yim, D. Lee, B. T. Lee, Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots Applied Physics Letters. ,vol. 78, pp. 1171- 1173 ,(2001) , 10.1063/1.1350620
J. Brault, M. Gendry, G. Grenet, G. Hollinger, J. Olivares, B. Salem, T. Benyattou, G. Bremond, Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001) Journal of Applied Physics. ,vol. 92, pp. 506- 510 ,(2002) , 10.1063/1.1481959
M. Gurioli, S. Sanguinetti, M. Henini, Dynamic quantum-confined stark effect in self-assembled InAs quantum dots Applied Physics Letters. ,vol. 78, pp. 931- 933 ,(2001) , 10.1063/1.1348305