Si-Based RF MEMS Components

摘要: Radio frequency microelectromechanical systems (RF MEMS) are an enabling technology for next-generation communications and radar in both military commercial sectors. RF MEMS-based reconfigurable circuits outperform solid-state terms of insertion loss, linearity, static power consumption advantageous applications where high signal nanosecond switching speeds not required. We have demonstrated a number MEMS switches on high-resistivity silicon (high-R Si) that were fabricated by leveraging the volume manufacturing processes available Microelectronics Development Laboratory (MDL), Class-1, radiation-hardened CMOS facility. describe novel tungsten aluminum-based processes, present results developed each these processes. Series shunt ohmic capacitive successfully demonstrated. The implications fabricating high-R Si suggested future directions developing low-loss also discussed.