3-D integration of MQW modulators over active submicron CMOS circuits: 375 Mb/s transimpedance receiver-transmitter circuit
作者： A.V. Krishnamoorthy , A.L. Lentine , K.W. Goossen , J.A. Walker , T.K. Woodward
DOI: 10.1109/68.473474
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摘要: We accomplish the integration of GaAs-AlGaAs multiple quantum well modulators directly on top active silicon CMOS circuits. This enables optoelectronic VLSI circuits to be achieved and also allows design optimization proceed independently placement bonding surface-normal optical circuit. Using this technique, we demonstrate operation a 0.8 micron transimpedance receiver-transmitter circuit at 375 Mb/s. >
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K.W. Goossen, J.A. Walker, L.A. D'Asaro, S.P. Hui, B. Tseng, R. Leibenguth, D. Kossives, D.D. Bacon, D. Dahringer, L.M.F. Chirovsky, A.L. Lentine, D.A.B. Miller, GaAs MQW modulators integrated with silicon CMOS IEEE Photonics Technology Letters. ,vol. 7, pp. 360- 362 ,(1995) , 10.1109/68.376802