Antimony-containing materials for ion implantation
作者： Heiderman Douglas C , Reinicker Aaron , Sinha Ashwini K
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摘要: A novel method, composition and system for using antimony-containing dopant materials are provided. The is selected with sufficient vapor pressure to flow into an arc chamber as part of ion implant process. material represented by a non-carbon containing chemical formula, thereby reducing or eliminating the introduction carbon-based deposits chamber. stored in storage delivery vessel under stable conditions, which includes moisture-free environment that does not contain trace amounts moisture.
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