Electrical characterization of PMMA:TiO 2 gate dielectric for metal-insulator-semiconductor devices
作者： L. N. Ismail , M. N. A. Sauqi , Z. Habibah , S. H. Herman , M. N. Asiah
DOI: 10.1109/SCORED.2013.7002620
关键词:
摘要: This paper investigated the effect of dielectric thickness to electrical properties metal-insulator-semiconductor (MIS) device. The MIS device were fabricated having PMMA:TiO 2 and ZnO as semiconductor layer, respectively. nancomposite film deposited at different deposition speed from 1000, 2000, 3000, 4000, 5000, 6000 rpm. Results showed that there is difference in nanocomposite when varying speed. As spin increased, layer was reduced. performance degraded decreased. AFM image observed have an agglomeration particles on films. Roughness increased are increased.
sci-hub.se 参考文章(18)
Christian Melzer, Heinz von Seggern, Organic Field-Effect Transistors for CMOS Devices Organic Electronics. ,vol. 223, pp. 189- 212 ,(2009) , 10.1007/12_2009_9
Metal‐Insulator‐Semiconductor Capacitors John Wiley & Sons, Inc.. pp. 197- 240 ,(2006) , 10.1002/9780470068328.CH4
L. N. Ismail, S. A. Farahiyah, Z. Habibah, S. H. Herman, M. Rusop, Dielectric and physical properties of PMMA:TiO 2 thin films by varying TiO 2 concentration ieee symposium on humanities, science and engineering research. pp. 259- 262 ,(2012) , 10.1109/SHUSER.2012.6268859
Ming Chang Shih, Hsuan Yang Lin, Jia Wei Tan, Cheng Sen Chen, Shih Wei Feng, A Si-based Al/AlN/Si mis device and its photo responsivity conference on precision electromagnetic measurements. pp. 279- 280 ,(2010) , 10.1109/CPEM.2010.5544757
E. K. Kim, J. H. Kim, H. K. Noh, Y. H. Kim, Electrical properties of ZnO Nano-particles embedded in polyimide Journal of Electronic Materials. ,vol. 35, pp. 512- 515 ,(2006) , 10.1007/S11664-006-0091-3
N.G. Semaltianos, Spin-coated PMMA films Microelectronics Journal. ,vol. 38, pp. 754- 761 ,(2007) , 10.1016/J.MEJO.2007.04.019
Kwang Duk Na, Jeong Hwan Kim, Tae Joo Park, Jaewon Song, Cheol Seong Hwang, Jung-Hae Choi, Improved properties of Pt–HfO2 gate insulator–ZnO semiconductor thin film structure by annealing of ZnO layer Thin Solid Films. ,vol. 518, pp. 5326- 5330 ,(2010) , 10.1016/J.TSF.2010.04.004
Chien-Yie Tsay, Kai-Shiung Fan, Sih-Han Chen, Chia-Hao Tsai, Preparation and characterization of ZnO transparent semiconductor thin films by sol–gel method Journal of Alloys and Compounds. ,vol. 495, pp. 126- 130 ,(2010) , 10.1016/J.JALLCOM.2010.01.100
T. Yovcheva, A. Viraneva, G. Antova, M. Marudova, G. Mekishev, Charge storage in zinc oxide filled polymethylmethacrylate (PMMA) Films international symposium on electrets. pp. 119- 120 ,(2011) , 10.1109/ISE.2011.6085011
Israel Mejia, Magali Estrada, Characterization of Polymethyl Methacrylate (PMMA) Layers for OTFTs Gate Dielectric international caribbean conference on devices, circuits and systems. pp. 375- 377 ,(2006) , 10.1109/ICCDCS.2006.250890