作者: E. K. Kim , J. H. Kim , H. K. Noh , Y. H. Kim
DOI: 10.1007/S11664-006-0091-3
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摘要: The ZnO nano-particles were made in the polyimide dielectric matrix by using chemical reaction between zinc metal film and polyamic acid. concentration of particle is about 1.5×1012 cm−2, with average size below 10 nm, its shapes are almost spherical. Then, layer a stable material constant 2.9. To investigate electrical properties particles insulator film, we fabricated metal-insulator-semiconductor (MIS) structure measured capacitance-voltage (C-V) temperature modulation. At room temperature, C-V hysteresis voltage gap 2.8 V appeared MIS SiO2/Si substrate. As measuring decreased, curves shifted slightly to accumulation region gate bias. It was considered that charging may occur dominantly nanoparticles, having only few defects at interface polyimide/SiO2 polyimide/ZnO.