作者: Wolfram Jaegermann , Joachim Brötz , Andreas Klein , Christian Lohaus , Céline Steinert
DOI: 10.1063/1.5022683
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摘要: Hematite Fe2O3 seed layers are shown to constitute a pathway prepare highly conductive transparent tin-doped indium oxide thin films by room temperature magnetron sputtering. Conductivities of up σ = 3300 S/cm observed. The improved conductivity is not restricted the interface but related an enhanced crystallization films, which proceeds in rhombohedral phase.