Visible Photoluminescence from Anodically Oxidized Porous Silicon.
作者： Toshimichi Ito , Kenji Motoi , Osamu Arakaki , Akimitsu Hatta , Akio Hiraki
DOI: 10.1143/JJAP.33.L941
关键词:
摘要: Porous silicon (PS) anodically oxidized just after anodization of a wafer has been investigated. Room-temperature photoluminescence (PL) peaks shifted to shorter wavelengths at the initial oxidation stage, followed by PL blue shift saturation upon further oxidation. The temperature coefficient peak energy was -0.2 meV/K in former while it -0.5 latter. excitation spectra around 4 eV also showed changes corresponding shifts with mechanism is discussed relation band-gap widening due size reduction effect and appearance luminescence centers.
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