Structural and cathodoluminescence study of mechanically milled silicon

作者: C D az-Guerra , A Montone , J Piqueras , F Cardellini

DOI: 10.1088/0268-1242/17/1/312

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摘要: The structural and luminescent properties of nanocrystalline silicon produced by high-energy ball milling Si single crystals have been investigated using transmission electron microscopy (TEM), x-ray diffraction (XRD) cathodoluminescence (CL) in a scanning microscope. XRD measurements show that the average size nanocrystals milled samples is about 30 nm but TEM reveals wide range distribution including crystallites with dimension few nanometres. Ball causes appearance visible luminescence band at 1.61 eV, attributed to presence nanocrystals, near-infrared peaked 0.79 eV which suggested be related high density extended defects formed during mechanical treatment. These bands, processes Si, are not observed cathodoluminescent spectra untreated ball-milled SiO2 powder.

参考文章(34)
T. Sekiguchi, K. Sumino, Cathodoluminescence study on dislocations in silicon Journal of Applied Physics. ,vol. 79, pp. 3253- 3260 ,(1996) , 10.1063/1.361271
E Gaffet, M Harmelin, Crystal-amorphous phase transition induced by ball-milling in silicon Journal of the Less Common Metals. ,vol. 157, pp. 201- 222 ,(1990) , 10.1016/0022-5088(90)90176-K
O. K. Andersen, E. Veje, Experimental study of the energy-band structure of porous silicon. Physical Review B. ,vol. 53, pp. 15643- 15652 ,(1996) , 10.1103/PHYSREVB.53.15643
A. G. Cullis, L. T. Canham, Visible light emission due to quantum size effects in highly porous crystalline silicon Nature. ,vol. 353, pp. 335- 338 ,(1991) , 10.1038/353335A0
J. Piqueras, B. Méndez, R. Plugaru, G. Craciun, J.A. García, A. Remón, Cathodoluminescence from nanocrystalline silicon films and porous silicon Applied Physics A. ,vol. 68, pp. 329- 331 ,(1999) , 10.1007/S003390050897
Toshimichi Ito, Kenji Motoi, Osamu Arakaki, Akimitsu Hatta, Akio Hiraki, Visible Photoluminescence from Anodically Oxidized Porous Silicon. Japanese Journal of Applied Physics. ,vol. 33, ,(1994) , 10.1143/JJAP.33.L941
Osamu Arakaki, Akimitsu Hatta, Toshimichi Ito, Akio Hiraki, Luminescent Characteristics of Plasma-Oxidized Porous Silicon Japanese Journal of Applied Physics. ,vol. 33, pp. 6586- 6590 ,(1994) , 10.1143/JJAP.33.6586
P. Mutti, G. Ghislotti, S. Bertoni, L. Bonoldi, G. F. Cerofolini, L. Meda, E. Grilli, M. Guzzi, Room‐temperature visible luminescence from silicon nanocrystals in silicon implanted SiO2 layers Applied Physics Letters. ,vol. 66, pp. 851- 853 ,(1995) , 10.1063/1.113408
A. G. Cullis, L. T. Canham, P. D. J. Calcott, The structural and luminescence properties of porous silicon Journal of Applied Physics. ,vol. 82, pp. 909- 965 ,(1997) , 10.1063/1.366536
T. Suzuki, T. Sakai, L. Zhang, Y. Nishiyama, Evidence for cathodoluminescence from SiOx in porous Si Applied Physics Letters. ,vol. 66, pp. 215- 217 ,(1995) , 10.1063/1.113138