作者: C D az-Guerra , A Montone , J Piqueras , F Cardellini
DOI: 10.1088/0268-1242/17/1/312
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摘要: The structural and luminescent properties of nanocrystalline silicon produced by high-energy ball milling Si single crystals have been investigated using transmission electron microscopy (TEM), x-ray diffraction (XRD) cathodoluminescence (CL) in a scanning microscope. XRD measurements show that the average size nanocrystals milled samples is about 30 nm but TEM reveals wide range distribution including crystallites with dimension few nanometres. Ball causes appearance visible luminescence band at 1.61 eV, attributed to presence nanocrystals, near-infrared peaked 0.79 eV which suggested be related high density extended defects formed during mechanical treatment. These bands, processes Si, are not observed cathodoluminescent spectra untreated ball-milled SiO2 powder.