Bendable single crystal silicon thin film transistors formed by printing on plastic substrates

摘要: Bendable, high performance single crystal silicon transistors have been formed on plastic substrates using an efficient dry transfer printing technique. In these devices, free standing objects, which we refer to as microstructured (μs‐Si), are picked up, a conformable rubber stamp, from the top surface of wafer they generated. The μs‐Si is then transferred, specific location and with controlled orientation, onto thin sheet. efficiency this method demonstrated by fabrication array film that exhibit excellent electrical properties: average device effective mobilities, evaluated in linear regime, ∼240cm2∕Vs, threshold voltages near 0V. Frontward backward bending tests demonstrate mechanical robustness flexibility devices.