Reverse current-voltage characteristics of metal-silicide Schottky diodes

摘要: Abstract The soft behavior of reverse biased Schottky barrier diodes has often been difficult to interpret quantitatively. development metal-silicide devices with diffused guard rings made it possible verify experimentally an advanced theoretical model. Reverse characteristics can now be accurately predicted over wide ranges current, voltage, height and temperature. description accounts for anisotropy effective masses, scattering by optical phonons, quantum mechanical reflection tunneling at the metal-semiconductor interface. These considerations yield practical Richardson constants equal 112 electrons 32 holes in silicon. Absence true saturation characteristic is caused electric field dependence height. In addition usual image-force correction, lowered a newly recognized effect attributed electrostatic dipole layer Experimental have fabricated using RhSi, ZrSi2, PtSi contacts, forming barriers both n- p-type resulting structures found extremely stable uniform; furthermore, interface, produced solid-solid chemical reaction, believed free from intervening layers oxide other contaminants. When necessary eliminate field-enhancement electrode periphery, incorporated into structures. Agreement between experimental data theory obtained nearly five orders magnitude bias eleven current density, usually rms deviation less than 10 per cent.