Electrical and optical properties of Ge x Fe x Se 100−2x chalcogenide thin films

摘要: Abstract Optical absorption at room temperature and electrical conductivity temperatures between 283 333 K of vacuum evaporated Ge x Fe Se 100−2 (0≤ ≤15) amorphous thin films have been studied as a function composition film thickness. It was found that the optical is due to indirect transition energy gap increases with increasing both content; on other hand, width band tail exhibits opposite behavior. The E opt be almost thickness independent. show two types conduction, higher conduction extended states, while low variable range hopping in localized states near Fermi level. Increasing contents were decrease state density N ( F ), increase activation for which nearly Variation atomic densities ρ , molar volume V glass T g cohesive C.E number constraints Co average coordination Z investigated. relationship chemical discussed terms C.E, heat atomization numbers.