Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates
作者： Apurba Laha , A. Fissel , H. J. Osten
DOI: 10.1063/1.3318260
关键词:
摘要: The incorporation of few monolayers Ge chemisorbed on Si surface has been found to have significant impact the electrical properties crystalline Gd2O3 grown epitaxially substrates. Although coverage does not show any influence epitaxial quality layers, however, it exhibits a strong their properties. We that by incorporating at interface between and Si, capacitance-voltage characteristics, fixed charge density traps Pt/Gd2O3/Si capacitor are much superior those layers clean surfaces.
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