Modelling mobility degradation due to remote coulomb scattering from dielectric charges and its impact on MOS device performance
作者： G.S. Lujan , W. Magnus , L-Å Ragnarsson , S. Kubicek , S. De Gendt
DOI: 10.1016/J.MICROREL.2004.11.046
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摘要: … In this paper, we analyse the impact of the remote Coulomb scattering on the electron mobility for a stack having more than one dielectric layer. Additionally we show the impact of the …
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Tsuneya Ando, Alan B. Fowler, Frank Stern, Electronic properties of two-dimensional systems Reviews of Modern Physics. ,vol. 54, pp. 437- 672 ,(1982) , 10.1103/REVMODPHYS.54.437
Massimo V. Fischetti, Deborah A. Neumayer, Eduard A. Cartier, Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering Journal of Applied Physics. ,vol. 90, pp. 4587- 4608 ,(2001) , 10.1063/1.1405826
A.K. Ghatak, K. Thyagarajan, M.R. Shenoy, A novel numerical technique for solving the one-dimensional Schroedinger equation using matrix approach-application to quantum well structures IEEE Journal of Quantum Electronics. ,vol. 24, pp. 1524- 1531 ,(1988) , 10.1109/3.7079