The Influence of Annealing on Thin Films of β-SiC

摘要: Silicon carbide crystals grow in various crystal structures and modifications, the most prevalent being cubic zinc blende or beta form 6H hexagonal alpha polytype. Much research has been performed on nature of polytypism [1–3] transformation one polytype to another [4–6, 8]. In this paper results are given experiments determine if structure β-silicon films deposited α substrates could be improved by thermal annealing was stable temperature range where 2H 3C silicon occurs. Electron diffraction studies were used observe structural changes transformations films.