The discovery of a 2H-3C solid state transformation in silicon carbide single crystals
作者： P. Krishna , R.C. Marshall , C.E. Ryan
DOI: 10.1016/0022-0248(71)90033-9
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摘要: Needle-shaped single crystals of 2H (wurtzite type) SiC, grown by a vapour-liquid-solid mechanism, are transformed to the 3C (sphalerite structure on annealing in argon at temperatures above 1400°C. The temperature which structural transformation is induced varies from one crystal another ranging 1400°C 1800°C. before and after heat-treatment was identified X-ray diffraction photographs. discovery this explains absence ABAB… packing SiC polytypes formed high 2000°C suggests that cubic stable modification, least over temperature- range about
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