Impacts of O 2 content on the properties of ZnO thin films prepared by magnetron sputtering
作者： Chen Pan , Zhiwei Zhao , Chao Wang
DOI: 10.1109/IVEC.2015.7224026
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摘要: A series of experiments for ZnO thin films were made by reactive DC magnetron sputtering different oxygen content in mixed gases. prepared at 40% O 2 exhibited excellent properties, such as high transmittance, band-gap energy. These features are benefit the preparation film transistors.
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