High mobility MISFET with low trapped charge in HfSiO films
作者： A. Morioka , H. Watanabe , M. Miyamura , T. Tatsumi , M. Saitoh
DOI: 10.1109/VLSIT.2003.1221137
关键词:
摘要: MISFETs with HfSiO (EOT:1.8 nm) gate insulator have been reached high Ion (95%) and low leakage current (1/100) against SiO/sub 2/ film. This was achieved by the suppression of remote Coulomb scattering, caused electron traps in stack. It experimentally confirmed that less than 3/spl times/10/sup 12/ C/cm/sup trap level is required to get mobility.
vlsisymposium.org 参考文章(1)
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