Fast $V_{\rm th}$ Instability in $\hbox{HfO}_{2}$ Gate Dielectric MOSFETs and Its Impact on Digital Circuits
作者： Chen Shen , Tian Yang , Ming-Fu Li , Xinpeng Wang , C. E. Foo
关键词:
摘要: Fast component of Vth instability in MOSFET with HfO 2 gate dielectric is systematically measured and characterized. A charge-trapping/detrapping model used to simulate the overall agreement experiments. Experimental modeling data provide predict fast shift under both static dynamic stress conditions. These are incorporated into HSpice circuit simulation evaluate impact on performance digital realistic situations. Considering properties instability, can be optimized by design addition process improvements. This should included guideline development for future CMOSFET systems
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