Separation of fast and slow NBTI components under long-term stress in pMISFETs with ultra-thin high-k and SiON dielectrics

摘要: Fast and slow components of NBTI in ultra-thin (sub-1-nm EOT) HfSiON/SiO2 SiON pMISFETs were investigated detail by using a separation method the two during long-term stress. For both HfSiON dielectrics, following results commonly obtained: 1) fast have dasiaindependentpsila universalities DeltaVth vs. stress-time slope, 2) component becomes dominant after Therefore, it is likely that basic mechanisms for are very similar. In case, ploy-Si gate process additionally affects on behavior at low electric-field We also discuss possible origins components.