Organometallic vapor‐phase‐epitaxial growth and characterization of ZnGeAs2 on GaAs
作者： G. S. Solomon , M. L. Timmons , J. B. Posthill
DOI: 10.1063/1.342884
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摘要: We report the epitaxial growth of single‐crystal stoichiometric ZnGeAs2. The (001) ZnGeAs2 layers were deposited by organometallic vapor‐phase epitaxy on (100) GaAs. has specular surface morphology. chemical composition been confirmed x‐ray diffraction, electron microprobe, and Auger spectroscopy. Selected‐area diffraction patterns clearly indicate chalcopyrite structure that [001] lattice direction is direction. X‐ray indicates c‐direction constant 11.192 A for our material, which an elongation 0.35% from bulk material value 11.153 A. When stiffness constants are approximated those GaAs, this c‐axis can be explained a contraction in induced 3.4×10−3 mismatch between GaAs substrate. Absorptance transmittance measurements direct band gap approxi...
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