Electron Microscopy Studies of Potential 1-eV Bandgap Semiconductor Compounds ZnGeAs2 and Zn3As2 Grown by MOVPE: Preprint
作者： M. J. Romero , A. G. Norman , J. M. Olson , M. M. Al-Jassim
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摘要: … We have performed electron microscopy studies on metal-organic vapor phase epitaxy (MOVPE) layers of ZnGeAs2 and Zn3As2 that are potential 1-eV bandgap semiconductors for …
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