Photoluminescence properties of metalorganic vapor phase epitaxial Zn3As2
作者： J. R. Botha , G. J. Scriven , J. A. A. Engelbrecht , A. W. R. Leitch
DOI: 10.1063/1.371569
关键词:
摘要: The photoluminescence (PL) properties of the II3V2 compound semiconductor Zn3As2, grown by metalorganic vapor phase epitaxy, is investigated in temperature range 4.2–350 K. Several lines are reported, believed to be due acceptors and donor-acceptor complexes epitaxial material. From variable PL, band gap deduced indirect nature (in contrast most experimental findings date which have indicated direct nature) ∼25–30 meV larger than gap. energy has been extracted from PL spectra 110–350 A linear relationship observed this with slope dEg/dT=−4.00×10−4 eV/K. yielded a value 1.005 eV for at room good agreement values between 0.989 0.999 obtained transmission reflection measurements.
harvard.edu
scitation.org
aip.org
sci-hub.se 参考文章(14)
P. J. LIN-CHUNG, Energy-Band Structures of Cd 3 As 2 and Zn 3 As 2 Physical Review. ,vol. 188, pp. 1272- 1280 ,(1969) , 10.1103/PHYSREV.188.1272
K. Sierański, J. Szatkowski, J. Misiewicz, Semiempirical tight-binding band structure ofII3V2semiconductors:Cd3P2,Zn3P2,Cd3As2, andZn3As2 Physical Review B. ,vol. 50, pp. 7331- 7337 ,(1994) , 10.1103/PHYSREVB.50.7331
W Zdanowicz, L Zdanowicz, Semiconducting Compounds of the AII BV Group Annual Review of Materials Science. ,vol. 5, pp. 301- 328 ,(1975) , 10.1146/ANNUREV.MS.05.080175.001505
A. Srivastava, B. Chelluri, T.Y. Chang, A. Ourmazd, A.H. Dayem, J.L. Zyskind, Molecular beam epitaxial growth of II–V semiconductor Zn3As2 and II–IV–V chalcopyrite ZnGeAs2 Journal of Crystal Growth. ,vol. 81, pp. 530- 535 ,(1987) , 10.1016/0022-0248(87)90448-9
D. M. Hwang, S. A. Schwarz, P. Mei, R. Bhat, T. Venkatesan, L. Nazar, C. L. Schwartz, Conversion of InP/In0.53Ga0.47As superlattices to Zn3P2/In1−xGaxAs and Zn3P2/Zn3As2superlattices by Zn diffusion Applied Physics Letters. ,vol. 54, pp. 1160- 1162 ,(1989) , 10.1063/1.101480
A. H. Dayem, J. L. Zyskind, A. Srivastava, B. Chelluri, T. Y. Chang, A. Ourmazd, Molecular beam epitaxial growth of the II‐V semiconductor compound Zn3As2 Applied Physics Letters. ,vol. 49, pp. 1665- 1667 ,(1986) , 10.1063/1.97261
J. Misiewicz, J.M. Pawlikowski, Optical band-gap of Zn3As2 Solid State Communications. ,vol. 32, pp. 687- 690 ,(1979) , 10.1016/0038-1098(79)90729-4
E. W. Williams, Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor Center Physical Review. ,vol. 168, pp. 922- 928 ,(1968) , 10.1103/PHYSREV.168.922
Takao Koda, Shigeo Shionoya, Masamichi Ichikawa, Shigeru Minomura, Effect of pressure on the luminescence of zinc sulphide phosphors Journal of Physics and Chemistry of Solids. ,vol. 27, pp. 1577- 1586 ,(1966) , 10.1016/0022-3697(66)90235-6
G.J. Scriven, A.W.R. Leitch, J.H. Neethling, V.V. Kozyrkov, V.J. Watters, The growth of Zn3As2 on InP by atmospheric pressure MOVPE Journal of Crystal Growth. ,vol. 170, pp. 813- 816 ,(1997) , 10.1016/S0022-0248(96)00558-1