作者: Rasmus B. Godiksen , Zachary T. Trautt , Moneesh Upmanyu , Jakob Schiøtz , Dorte Juul Jensen
DOI: 10.1016/J.ACTAMAT.2007.07.055
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摘要: We have applied an atomistic simulation methodology based on molecular dynamics to study grain boundary migration in crystalline materials, driven by the excess energy of dislocation arrangements. This method is used simulate recrystallization metals. The simulations reveal that process not uniform as assumed many models, but boundaries migrate irregular fashion and exhibit a strong dependence local presence dislocations, which can distort significantly.