Highly uniform and stable n-type carbon nanotube transistors by using positively charged silicon nitride thin films.
作者： Tae-Jun Ha , Kevin Chen , Steven Chuang , Kin Man Yu , Daisuke Kiriya
DOI: 10.1021/NL5037098
关键词:
摘要: Air-stable n-doping of carbon nanotubes is presented by utilizing SiN x thin films deposited by plasma-enhanced chemical vapor deposition. The fixed positive charges in SiN x, arising …
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