作者: Hong Tak Kim , Jun Young Park , Chinho Park
DOI: 10.1007/S11814-011-0219-X
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摘要: TiN films were deposited onto a glass substrate by DC facing target sputtering, and the effects of N2 flow rate on film properties investigated. Prepared had rock salt (NaCl-type) structure with very low resistivity (∼30 μΩ·cm) gold-like color. Increase in played an important role controlling films, such as Ti/N ratio growth orientation. The orientation changed from (111) phase to (200), N/Ti becoming near stoichiometric. change was caused increase rate, which weakens kinetic energy bombarding particles. observed phenomenon is explained loss reactive plasma due difference inner degree freedom molecular gas causing reduction effective for radicals.