A high programming throughput 0.35 /spl mu/m p-channel DINOR flash memory

摘要: A high programming throughput p-channel DINOR flash memory with the BBHE injection method has been developed using 0.35 /spl mu/m CMOS process. This realizes a of 8 nsec/Byte by utilizing 512 Byte parallel program operation low leakage current less than 250 mu/A. We have also demonstrated good erase/write cycling endurance 1/spl times/10/sup 5/. process and device technology is very promising to performance 64 Mbit memories future devices.