Mechanisms for forming post-passivation interconnect structure
作者： Hsien-Wei Chen , Ying-Ju Chen
DOI:
关键词:
摘要: Embodiments of mechanisms for forming a semiconductor device are provided. The includes contact pad over substrate. also passivation layer the substrate and first portion pad, second is exposed through an opening. further post-passivation interconnect coupled to pad. In addition, bump outside diffusion barrier physically insulating from while electrically connecting layer.
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