InGaN/GaN quantum dots as optical probes for the electric field at the GaN/electrolyte interface

摘要: We investigated the electric-field dependence of photoluminescence-emission properties InGaN/GaN quantum dot multilayers in contact with an electrolyte. Controlled variations surface potential were achieved by application external electric fields using electrolytic Schottky and variation solution's pH value. Prior to characterization, a selective electrochemical passivation process was required suppress leakage currents. The luminescence is strongly affected variations, i.e., it increases exponentially cathodic bias acidic values. results cannot be explained modification intra-dot polarization induced via confined Stark effect but are attributed suppression/enhancement non-radiative recombination processes, mainly hole transfer into establish link between photoluminescence intensity magnitude at semiconductor/electrolyte interface.